A silicon drift detector-CMOS front-end system for high resolution X-ray spectroscopy up to room temperature

摘要

A system constituted by a Silicon Drift Detector (SDD), fabricated with an innovative technology for minimizing the anode current, and a new CMOS charge sensitive preamplifier (CSA), designed for ultimate low noise performance, has been realized and experimentally characterized. The SDD is hexagonal with an active area of 13 mm2. The current density measured at the anode with the detector in operating condition is 25 pA/cm2 at +20°C. The CSA—named SIRIO—has intrinsic Equivalent Noise Charge (ENC) ranging from 2.9 to 1.5 electrons r.m.s. at 0.8 μs and 11 μs peaking times at room temperature, respectively. With the SDD-SIRIO system at +21°C, an energy resolution of 141 eV FWHM on the 55Fe line at 5.9 keV and 74 eV FWHM on the pulser line with a noise threshold of 170 eV have been measured at 0.8 μs peaking time. The system has been tested from −30°C to +30°C with energy resolution from 124 eV to 148 eV FWHM at 5.9 keV. A moderate cooling at +10°C is sufficient to reach 133 eV FWHM at 5.9 keV.